Search Results for &quot; FDC653N &quot;

N-Channel JFET 30V 5A 35mR SOT-23-6 SMD

SUPERSOT-6

Active

Package/Case: SOT-23-6

Continuous Drain Current (ID): 5A

Current Rating: 5A

Drain to Source Breakdown Voltage: 30V

Rochester Electronics

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ

Volume Production

Continuous Drain Current (ID): 5A

Current Rating: 5A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 35mR

FDC653N_F095

N-Channel MOSFET 30V 5A 1.6W Surface Mount

Obsolete

Continuous Drain Current (ID): 5A

Drain to Source Breakdown Voltage: 30V

Fall Time: 12ns

Gate to Source Voltage (Vgs): 20V

FDC653N-NL

006, Plastic Molded, Super SOT-6 Pkg, Single, SMD (33)<AZ

Volume Production

Search Results for "FDC653N"

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N-Channel JFET 30V 5A 35mR SOT-23-6 SMD

SUPERSOT-6

Active

Package/Case: SOT-23-6

Continuous Drain Current (ID): 5A

Current Rating: 5A

Drain to Source Breakdown Voltage: 30V

Rochester Electronics

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ

Volume Production

Continuous Drain Current (ID): 5A

Current Rating: 5A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 35mR

FDC653N_F095

N-Channel MOSFET 30V 5A 1.6W Surface Mount

Obsolete

Continuous Drain Current (ID): 5A

Drain to Source Breakdown Voltage: 30V

Fall Time: 12ns

Gate to Source Voltage (Vgs): 20V

FDC653N-NL

006, Plastic Molded, Super SOT-6 Pkg, Single, SMD (33)<AZ