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Search Results for "FF900R12IP4BOSA2"
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FF900R12IP4BOSA2
Infineon
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-11
Datasheet
FLANGE MOUNT, R-XUFM-X7
Active
Package/Case:
Module
Collector Emitter Breakdown Voltage:
1.2kV
Collector Emitter Saturation Voltage:
2.1V
Collector Emitter Voltage (VCEO):
1.7V
FF900R12IP4DBOSA2
Infineon
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-11
Datasheet
FLANGE MOUNT, R-XUFM-X7
Active
Max Operating Temperature:
175
Number of Terminals:
7
Terminal Position:
UPPER
Pin Count:
11
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