Search Results for &quot; FF900R12IP4D &quot;

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

FLANGE MOUNT, R-XUFM-X7

Active

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 1.7V

Collector Emitter Voltage (VCEO): 1.7V

FF900R12IP4

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

FLANGE MOUNT, R-XUFM-X7

Active

Max Operating Temperature: 175

Number of Terminals: 7

Terminal Position: UPPER

Pin Count: 11

FF900R12IP4DBOSA2

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-11

FLANGE MOUNT, R-XUFM-X7

Active

Max Operating Temperature: 175

Number of Terminals: 7

Terminal Position: UPPER

Pin Count: 11

FF900R12IP4DVBOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10

MODULE-10

Not Recommended

Number of Terminals: 10

Min Operating Temperature: -40

Terminal Position: UPPER

Number of Elements: 2

FF900R12IP4VBOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10

FLANGE MOUNT, R-PUFM-X10

Not Recommended

Number of Terminals: 10

Min Operating Temperature: -40

Terminal Position: UPPER

Number of Elements: 2

FF900R12IP4BOSA2

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-11

FLANGE MOUNT, R-XUFM-X7

Active

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 2.1V

Collector Emitter Voltage (VCEO): 1.7V

+15

FF900R12IP4PBOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10

FLANGE MOUNT, R-PUFM-X10

Active

Number of Terminals: 10

Min Operating Temperature: -40

Terminal Position: UPPER

Number of Elements: 2

FF900R12IE4

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

FLANGE MOUNT, R-XUFM-X7

Active

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 1.75V

Collector Emitter Voltage (VCEO): 1.2kV

+10

FF900R12IE4T

Trans IGBT Module N-CH 1200V 900A 5100000mW 10-Pin PRIME2-1 Tray

Screw

Obsolete

Package/Case: PRIME2-1

Pin Count: 10

PCB: 10

Package Length (mm): 172

+11

FF900R12IE4BOSA1

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

FLANGE MOUNT, R-XUFM-X7

Active

Max Operating Temperature: 175

Number of Terminals: 7

Terminal Position: UPPER

Pin Count: 11

FF900R12IE4PBOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10

FLANGE MOUNT, R-PUFM-X10

Active

Number of Terminals: 10

Min Operating Temperature: -40

Terminal Position: UPPER

Number of Elements: 2

FF900R12IE4VBOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10

FLANGE MOUNT, R-PUFM-X10

Active

Number of Terminals: 10

Min Operating Temperature: -40

Terminal Position: UPPER

Number of Elements: 2

FF900R12IE4VPBOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10

FLANGE MOUNT, R-PUFM-X10

Active

Number of Terminals: 10

Min Operating Temperature: -40

Terminal Position: UPPER

Number of Elements: 2

FF92

Ebm-Papst

FAN FILTER ASSEMBLY 92MM

Volume Production

Length: 125mm

Material: PC, Polycarbonate

Packaging: Bulk

Radiation Hardening: No

K/FF

Velleman

GLOVE, POLYAMIDE, L/FREE, PU, SIZE 6 - More Details

Volume Production

Package/Case: 100

IS-K-FF

Built-in thermocouples, IS-K-FF, Roth+Co.

Volume Production

Design: Standard

Element: Type K

Dimensions L x W x H: 30 x 25 mm

Contact: circular

IM-E-FF

Socket, E, Iec, Mini, Fascia

Volume Production

Design: Mini

Element: Type E

Dimensions L x W x H: 14 x 24 mm

Contact: flat

IM-T-FF

Built-in thermocouples, IM-T-FF, Roth+Co.

Volume Production

Design: Mini

Element: Type T

Dimensions L x W x H: 14 x 24 mm

Contact: flat

IS-T-FF

Labfacility

LABFACILITY IS-T-FF Thermocouple Connector, Socket, Type T, IEC, Standard, Fascia Panel Mount

End of Life

Color: Brown

Gender: Receptacle

Max Operating Temperature: 120°C

Mount: Panel

IS-N-FF

Built-In Thermocouples