Search Results for "FP30R06W1E3"

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FP30R06W1E3

Infineon

Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray

Datasheet

EASY1B

Active

Package/Case: Module

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Saturation Voltage: 1.55V

Collector Emitter Voltage (VCEO): 600V

FP30R06W1E3BOMA1

Infineon

Trans IGBT Module N-CH 600V 37A 115000mW 20-Pin EASY1B-1 Tray

Datasheet

AG-EASY1B-1

Active

Max Operating Temperature: 175

Number of Terminals: 23

Terminal Position: UPPER

Pin Count: 23

FP30R06W1E3B11BOMA1

Infineon

Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23

Datasheet

FLANGE MOUNT, R-XUFM-X23

Active

Number of Terminals: 23

Terminal Position: UPPER

Number of Elements: 7

FP30R06W1E3_B11

Infineon

Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23

Datasheet

MODULE-23

Active

Package/Case: Module

Max Collector Current: 37A

Max Operating Temperature: 150°C

Min Operating Temperature: -40°C

Search Results for "FP30R06W1E3"

Filters

FP30R06W1E3

Infineon

Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray

Datasheet

EASY1B

Active

Package/Case: Module

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Saturation Voltage: 1.55V

Collector Emitter Voltage (VCEO): 600V

FP30R06W1E3BOMA1

Infineon

Trans IGBT Module N-CH 600V 37A 115000mW 20-Pin EASY1B-1 Tray

Datasheet

AG-EASY1B-1

Active

Max Operating Temperature: 175

Number of Terminals: 23

Terminal Position: UPPER

Pin Count: 23

FP30R06W1E3B11BOMA1

Infineon

Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23

Datasheet

FLANGE MOUNT, R-XUFM-X23

Active

Number of Terminals: 23

Terminal Position: UPPER

Number of Elements: 7

FP30R06W1E3_B11

Infineon

Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23

Datasheet

MODULE-23

Active

Package/Case: Module

Max Collector Current: 37A

Max Operating Temperature: 150°C

Min Operating Temperature: -40°C