Search Results for &quot; FQAF16N50 &quot;

500V N-Channel Power MOSFET, 11.3A, 320mR, TO-3PF

FLANGE MOUNT, R-PSFM-T3

Active

Continuous Drain Current (ID): 11.3A

Current Rating: 11.3A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 320mR

N-Channel QFET® MOSFET 500V, 11.3A, 320mΩ, TO3PF,MOLDED,3LD,FULLPACK (AG), 360/RAIL

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

N-Channel MOSFET 500V 16A 200W Through Hole

Obsolete

Continuous Drain Current (ID): 16A

Current Rating: 16A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 320mR

FQA16N50-F109

MOSFET 500v QFET

Not Recommended for New Design

Continuous Drain Current (ID): 16A

Drain to Source Voltage (Vdss): 500V

Input Capacitance: 3nF

Max Operating Temperature: 150°C

FQAF13N50

MOSFET

Obsolete

Continuous Drain Current (ID): 9.6A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 430mR

Fall Time: 85ns

Power Field-Effect Transistor, 16A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN

TO-3PN, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Rochester Electronics

16A, 500V, 0.32ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN

TO-3PN, 3 PIN

Active

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Number of Elements: 1

Search Results for "FQAF16N50"

Filters

500V N-Channel Power MOSFET, 11.3A, 320mR, TO-3PF

FLANGE MOUNT, R-PSFM-T3

Active

Continuous Drain Current (ID): 11.3A

Current Rating: 11.3A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 320mR

N-Channel QFET® MOSFET 500V, 11.3A, 320mΩ, TO3PF,MOLDED,3LD,FULLPACK (AG), 360/RAIL

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

N-Channel MOSFET 500V 16A 200W Through Hole

Obsolete

Continuous Drain Current (ID): 16A

Current Rating: 16A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 320mR

FQA16N50-F109

MOSFET 500v QFET

Not Recommended for New Design

Continuous Drain Current (ID): 16A

Drain to Source Voltage (Vdss): 500V

Input Capacitance: 3nF

Max Operating Temperature: 150°C

FQAF13N50

MOSFET

Obsolete

Continuous Drain Current (ID): 9.6A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 430mR

Fall Time: 85ns

Power Field-Effect Transistor, 16A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN

TO-3PN, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Rochester Electronics

16A, 500V, 0.32ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN