Search Results for &quot; FQH44N10_F133 &quot;

N-Channel QFET® MOSFET 100V, 48A, 39mΩ, TO-247 3L, 3600-RAIL

FLANGE MOUNT, R-PSFM-T3

Active

Continuous Drain Current (ID): 48A

Element Configuration: Single

Fall Time: 100ns

Gate to Source Voltage (Vgs): 25V

Power MOSFET, N-Channel, QFET®, 100 V, 48 A, 39 mΩ, TO-247, TO-247 3L, 450-TUBE

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-247AB

Vishay(Siliconix)

MOSFET N-CH 100V 48A TO-247

Unknown

Package/Case: DIP

Continuous Drain Current (ID): 2.5A

Drain to Source Voltage (Vdss): 60V

Input Capacitance: 640pF

FQH44N10

MOSFET N-CH 100V 48A TO-247

Obsolete

Package/Case: TO-247-3

Continuous Drain Current (ID): 48A

Current Rating: 48A

Drain to Source Breakdown Voltage: 100V

Search Results for "FQH44N10_F133"

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FQH44N10_F133

N-Channel QFET® MOSFET 100V, 48A, 39mΩ, TO-247 3L, 3600-RAIL

FLANGE MOUNT, R-PSFM-T3

Active

Continuous Drain Current (ID): 48A

Element Configuration: Single

Fall Time: 100ns

Gate to Source Voltage (Vgs): 25V

Power MOSFET, N-Channel, QFET®, 100 V, 48 A, 39 mΩ, TO-247, TO-247 3L, 450-TUBE

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-247AB

Vishay(Siliconix)

MOSFET N-CH 100V 48A TO-247

Unknown

Package/Case: DIP

Continuous Drain Current (ID): 2.5A

Drain to Source Voltage (Vdss): 60V

Input Capacitance: 640pF

FQH44N10

MOSFET N-CH 100V 48A TO-247