Search Results for &quot; FQI1P50TU &quot;

500V P-CH MOSFET 1.5A TO-262 10.5R

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 1.5A

Current Rating: -1.5A

Drain to Source Breakdown Voltage: -500V

Rochester Electronics

Trans MOSFET P-CH 500V 1.5A 3-Pin(3+Tab) I2PAK T/R

Unknown

MOSFET 500V P-Channel QFET

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 2.7A

Current Rating: -2.7A

Drain to Source Breakdown Voltage: -500V

FQU1P50TU

MOSFET

Obsolete

Continuous Drain Current (ID): 1.2A

Drain to Source Breakdown Voltage: -500V

Drain to Source Resistance: 10.5R

Fall Time: 30ns

Fairchild

Power Field-Effect Transistor, 2.7A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

I2PAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Search Results for "FQI1P50TU"

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500V P-CH MOSFET 1.5A TO-262 10.5R

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 1.5A

Current Rating: -1.5A

Drain to Source Breakdown Voltage: -500V

Rochester Electronics

Trans MOSFET P-CH 500V 1.5A 3-Pin(3+Tab) I2PAK T/R

Unknown

MOSFET 500V P-Channel QFET

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 2.7A

Current Rating: -2.7A

Drain to Source Breakdown Voltage: -500V

FQU1P50TU

MOSFET

Obsolete

Continuous Drain Current (ID): 1.2A

Drain to Source Breakdown Voltage: -500V

Drain to Source Resistance: 10.5R

Fall Time: 30ns

Fairchild

Power Field-Effect Transistor, 2.7A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3