Search Results for &quot; FQI3N90TU &quot;

N-CHANNEL 900V 3.6A TO-262-3 Through Hole MOSFET

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 3.6A

Current Rating: 3.6A

Drain to Source Breakdown Voltage: 900V

900V N-Channel MOSFET, 4.2A, 3.3 Ohm, I2PAK

IN-LINE, R-PSIP-T3

Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 4.2A

Current Rating: 4.1A

Drain to Source Breakdown Voltage: 900V

Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) I2PAK Rail

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 2.2A

Current Rating: 2.2A

Drain to Source Breakdown Voltage: 900V

Trans MOSFET N-CH 300V 3.2A 3-Pin(3+Tab) I2PAK T/R

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 3.2A

Current Rating: 3.2A

Drain to Source Breakdown Voltage: 300V

FQI6N90TU

MOSFET

Obsolete

Continuous Drain Current (ID): 5.8A

Drain to Source Breakdown Voltage: 900V

Drain to Source Resistance: 1.9R

Fall Time: 55ns

Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

I2PAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

N-Channel QFET® MOSFET 900V, 4.2A, 3.3Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL

I2PAK-3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Rochester Electronics

3.2A, 300V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

I2PAK-3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Pin Count: 3

Search Results for "FQI3N90TU"

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FQI3N90TU

N-CHANNEL 900V 3.6A TO-262-3 Through Hole MOSFET

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 3.6A

Current Rating: 3.6A

Drain to Source Breakdown Voltage: 900V

900V N-Channel MOSFET, 4.2A, 3.3 Ohm, I2PAK

IN-LINE, R-PSIP-T3

Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 4.2A

Current Rating: 4.1A

Drain to Source Breakdown Voltage: 900V

Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) I2PAK Rail

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 2.2A

Current Rating: 2.2A

Drain to Source Breakdown Voltage: 900V

Trans MOSFET N-CH 300V 3.2A 3-Pin(3+Tab) I2PAK T/R

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 3.2A

Current Rating: 3.2A

Drain to Source Breakdown Voltage: 300V

FQI6N90TU

MOSFET

Obsolete

Continuous Drain Current (ID): 5.8A

Drain to Source Breakdown Voltage: 900V

Drain to Source Resistance: 1.9R

Fall Time: 55ns

Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

I2PAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

N-Channel QFET® MOSFET 900V, 4.2A, 3.3Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL

I2PAK-3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Rochester Electronics

3.2A, 300V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3