N-Channel Power MOSFET, 900V Vdss, 4.2A continuous drain current, and 3.3 Ohm Rds On. Features include a TO-262-3 package, 140W max power dissipation, and a temperature range of -55°C to 150°C. This single-element MOSFET offers fast switching with turn-on delay of 25ns and fall time of 40ns. RoHS compliant and lead-free.
PackageTO-262-3
Current Rating4.1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQI4N90TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 4.2A |
| Current Rating | 4.1A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 3.3R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 3.3R |
| Element Configuration | Single |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.01mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 3.3R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 900V |
| Weight | 2.084g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI4N90TU Datasheet
Download the complete datasheet for Onsemi FQI4N90TU to view detailed technical specifications.
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