Search Results for &quot; FQI5N20LTU &quot;

Trans MOSFET N-CH 200V 4.5A 3-Pin(3+Tab) I2PAK Rail

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 4.5A

Current Rating: 4.5A

Drain to Source Breakdown Voltage: 200V

Fairchild

Power Field-Effect Transistor, 4.5A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

IN-LINE, R-PSIP-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

MOSFET N-CH 200V 4.5A I2PAK

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 4.5A

Current Rating: 4.5A

Drain to Source Breakdown Voltage: 200V

FQI4N20LTU

Trans MOSFET N-CH 200V 3.8A 3-Pin(3+Tab) I2PAK Rail

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 3.8A

Current Rating: 3.8A

Drain to Source Breakdown Voltage: 200V

FQU5N20LTU

MOSFET

Obsolete

Continuous Drain Current (ID): 3.8A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 1.2R

Fall Time: 50ns

FQI7N20LTU

MOSFET

Obsolete

Continuous Drain Current (ID): 6.5A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 750mR

Fall Time: 65ns

Rochester Electronics

4.5A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

I2PAK-3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Pin Count: 3

Search Results for "FQI5N20LTU"

Filters

Trans MOSFET N-CH 200V 4.5A 3-Pin(3+Tab) I2PAK Rail

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 4.5A

Current Rating: 4.5A

Drain to Source Breakdown Voltage: 200V

Fairchild

Power Field-Effect Transistor, 4.5A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

IN-LINE, R-PSIP-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

MOSFET N-CH 200V 4.5A I2PAK

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 4.5A

Current Rating: 4.5A

Drain to Source Breakdown Voltage: 200V

FQI4N20LTU

Trans MOSFET N-CH 200V 3.8A 3-Pin(3+Tab) I2PAK Rail

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 3.8A

Current Rating: 3.8A

Drain to Source Breakdown Voltage: 200V

FQU5N20LTU

MOSFET

Obsolete

Continuous Drain Current (ID): 3.8A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 1.2R

Fall Time: 50ns

FQI7N20LTU

MOSFET

Obsolete

Continuous Drain Current (ID): 6.5A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 750mR

Fall Time: 65ns

Rochester Electronics

4.5A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3