The FQI5N20TU is a 200V N-CHANNEL MOSFET with a continuous drain current of 4.5A. It features a drain to source breakdown voltage of 200V and a drain to source resistance of 1.2 ohms. The device has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is packaged in a TO-262-3 package and is available in quantities of 1000. The FQI5N20TU is lead free and RoHS compliant.
PackageTO-262-3
Current Rating4.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQI5N20TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 9ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI5N20TU Datasheet
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