Search Results for &quot; FQP11P06 &quot;

P-Channel MOSFET, -60V, -11.4A, 175mR, TO-220

FLANGE MOUNT, R-PSFM-T3

Active

Package/Case: TO-220-3

Continuous Drain Current (ID): 11.4A

Current Rating: -11.4A

Drain to Source Breakdown Voltage: -60V

Rochester Electronics

P-Channel Power MOSFET, QFET®, -60 V, -11.4 A, 175 mΩ, TO-220

Volume Production

Package/Case: TO-220

Continuous Drain Current (ID): 11.4A

Current Rating: -11.4A

Drain to Source Resistance: 175mR

FQP11P06_Q

P-CHANNEL FET TO-220AB -60V -11.4A 175mR 45ns

Obsolete

Package/Case: TO-220AB

Continuous Drain Current (ID): -11.4A

Drain to Source Breakdown Voltage: -60V

Drain to Source Resistance: 175mR

Search Results for "FQP11P06"

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P-Channel MOSFET, -60V, -11.4A, 175mR, TO-220

FLANGE MOUNT, R-PSFM-T3

Active

Package/Case: TO-220-3

Continuous Drain Current (ID): 11.4A

Current Rating: -11.4A

Drain to Source Breakdown Voltage: -60V

Rochester Electronics

P-Channel Power MOSFET, QFET®, -60 V, -11.4 A, 175 mΩ, TO-220

Volume Production

Package/Case: TO-220

Continuous Drain Current (ID): 11.4A

Current Rating: -11.4A

Drain to Source Resistance: 175mR

FQP11P06_Q

P-CHANNEL FET TO-220AB -60V -11.4A 175mR 45ns