Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-28
Trans IGBT Module N-CH 1200V 50A 280000mW 25-Pin ECONO2-6 Tray
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-28
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-25
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-28
Trans IGBT Module N-CH 1200V 75A 270000mW 28-Pin ECONO2-6 Tray
Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel, MODULE-33
Insulated Gate Bipolar Transistor, 82A I(C), 1700V V(BR)CES, N-Channel, MODULE-19
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, MODULE-23
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-22
Power Field-Effect Transistor, 50A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
50A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S, 3 PIN
Insulated Gate Bipolar Transistor
