Search Results for "GT20J101"
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GT20J101
Toshiba
IGBT 600V 20A 130W Through Hole
Datasheet
FLANGE MOUNT, R-PSFM-T3
Active
Collector Emitter Breakdown Voltage:
600V
Collector Emitter Saturation Voltage:
2.7V
Collector Emitter Voltage (VCEO):
600V
Max Collector Current:
20A
GT20J101(Q)
Toshiba
Trans IGBT Chip N-CH 600V 20A 3-Pin (3+Tab) TO-3PN
Datasheet
Volume Production
Collector Emitter Voltage (VCEO):
600V
Element Configuration:
Single
Max Operating Temperature:
150°C
Min Operating Temperature:
-55°C
