Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50
Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, CASE 221A-09, 3 PIN
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
Field Programmable Gate Array, 256-Cell, CMOS, PQFP100, TQFP-100
Field Programmable Gate Array, 640-Cell, CMOS, PQFP100, TQFP-100
Field Programmable Gate Array, 640-Cell, CMOS, PQFP100, TQFP-100
Field Programmable Gate Array, 2112-Cell, CMOS, PQFP144, TQFP-144
Field Programmable Gate Array, 2112-Cell, CMOS, PQFP100, TQFP-100
Field Programmable Gate Array, 133MHz, 1280-Cell, CMOS, PQFP144, TQFP-144
Field Programmable Gate Array, 6864-Cell, CMOS, PQFP144, TQFP-144
Field Programmable Gate Array, 133MHz, 1280-Cell, CMOS, PQFP100, TQFP-100
Field Programmable Gate Array, 2112-Cell, CMOS, PQFP100, TQFP-100