Search Results for "IGB01N120H2ATMA1"

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Power Bipolar Transistor, 3.2A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

End Of Life

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Insulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

End Of Life

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Power Bipolar Transistor, 3.2A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

End Of Life

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Insulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

End Of Life

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB