Search Results for &quot; IRF646 &quot;

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

ROHS COMPLIANT, TO-220, 3 PIN

Obsolete

Package/Case: TO-220AB

Continuous Drain Current (ID): 18A

Current Rating: 18A

Drain to Source Breakdown Voltage: 200V

+18

IRF645

Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Onsemi

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 4 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Package/Case: TO-220AB

Continuous Drain Current (ID): 18A

Drain to Source Voltage (Vdss): 200V

RoHS Compliant: No

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Continuous Drain Current (ID): 14A

Current Rating: 14A

Drain to Source Breakdown Voltage: 250V

Drain to Source Resistance: 280mR

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: SINGLE

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Number of Elements: 1

N-Channel MOSFET, 200V, 18A, 0.18ohm, TO-220

FLANGE MOUNT, R-PSFM-T3

Transferred

Package/Case: TO-220

Contact Plating: Tin, Lead

Continuous Drain Current (ID): 18A

Current Rating: 18A

+24

IRF641

Intersil

18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

TO-220AB

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Motorola

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

TO-220AB

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Philips

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Transferred

Max Operating Temperature: 150

IRF640R

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF640L

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

IN-LINE, R-PSIP-T3

Transferred

Package/Case: TO-262

Continuous Drain Current (ID): 18A

Current Rating: 18A

Drain to Source Voltage (Vdss): 200V

IRF640B

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF644A

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF644B

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Vishay(Siliconix)

N-Channel MOSFET, 200V, 18A, 180mR Rds On, D2PAK

SMALL OUTLINE, R-PSSO-G2

Transferred

Package/Case: D2PAK

Continuous Drain Current (ID): 18A

Current Rating: 18A

Drain to Source Resistance: 180mR

+23

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3

TO-263, D2PAK-3

Obsolete

Package/Case: D2PAK

Continuous Drain Current (ID): 18A

Current Rating: 18A

Drain to Source Breakdown Voltage: 200V

+13

Search Results for "IRF646"

Filters

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

ROHS COMPLIANT, TO-220, 3 PIN

Obsolete

Package/Case: TO-220AB

Continuous Drain Current (ID): 18A

Current Rating: 18A

Drain to Source Breakdown Voltage: 200V

+18

IRF645

Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Onsemi

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 4 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Package/Case: TO-220AB

Continuous Drain Current (ID): 18A

Drain to Source Voltage (Vdss): 200V

RoHS Compliant: No

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Transferred

Continuous Drain Current (ID): 14A

Current Rating: 14A

Drain to Source Breakdown Voltage: 250V

Drain to Source Resistance: 280mR

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: SINGLE

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Number of Elements: 1

N-Channel MOSFET, 200V, 18A, 0.18ohm, TO-220

FLANGE MOUNT, R-PSFM-T3

Transferred

Package/Case: TO-220

Contact Plating: Tin, Lead

Continuous Drain Current (ID): 18A

Current Rating: 18A

+24

IRF641

Intersil

18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

TO-220AB

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Motorola

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

TO-220AB

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Philips

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Transferred

Max Operating Temperature: 150

IRF640R

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF640L

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

IN-LINE, R-PSIP-T3

Transferred

Package/Case: TO-262

Continuous Drain Current (ID): 18A

Current Rating: 18A

Drain to Source Voltage (Vdss): 200V

IRF640B

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF644A

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF644B

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Vishay(Siliconix)

N-Channel MOSFET, 200V, 18A, 180mR Rds On, D2PAK

SMALL OUTLINE, R-PSSO-G2

Transferred

Package/Case: D2PAK

Continuous Drain Current (ID): 18A

Current Rating: 18A

Drain to Source Resistance: 180mR

+23

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3