Search Results for &quot; IRF7469TRPBF-1 &quot;

INTERNATIONAL RECTIFIER IRF7469TRPBF N CHANNEL MOSFET, 40V, 9A

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 9A

Drain to Source Voltage (Vdss): 40V

Drain-source On Resistance-Max: 17MR

+11

Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

IRF7469

Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

IRF7463

Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SO-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

IRF7468

Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 1.9A

Drain to Source Voltage (Vdss): 150V

Input Capacitance: 330pF

IRF7464

Power Field-Effect Transistor, 1.2A I(D), 200V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 1.2A

Drain to Source Voltage (Vdss): 200V

Input Capacitance: 280pF

Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

IRF7464TR

Power Field-Effect Transistor, 1.2A I(D), 200V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 1.2A

Current Rating: 1.2A

Drain to Source Voltage (Vdss): 200V

IRF7468TR

Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 14A

Current Rating: 14A

Drain to Source Voltage (Vdss): 30V

IRF7465TR

Single N-Channel 150 V 2.5 W 10 nC Hexfet Power Mosfet Surface Mount - SOIC-8

Not Recommended for New Design

Package/Case: SOIC

Continuous Drain Current (ID): 1.9A

Current Rating: 1.9A

Drain to Source Voltage (Vdss): 150V

IRF7465HR

Trans MOSFET N-CH 150V 1.9A 8-Pin SOIC

Obsolete

Package/Case: SOIC

IRF7468PBF

Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

LEAD FREE, SO-8

Obsolete

JEDEC Package Code: MS-012AA

IRF7464PBF

200V 1.2A N-Channel MOSFET SOIC 730mR

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 1.2A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 730mR

IRF7463PBF

Trans MOSFET N-CH 30V 14A 8-Pin SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 14A

Current Rating: 14A

Drain to Source Breakdown Voltage: 30V

+27

IRF7465TRPBF

N-Ch MOSFET, 150V, 1.9A, 1-Elem, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

IRF7463TRPBF

Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SO-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

IRF7464TRPBF

N-Channel MOSFET, 200V, 1.2A, 730mR, SO-8

SO-8

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 1.2A

Current Rating: 1.2A

Drain to Source Breakdown Voltage: 200V

Search Results for "IRF7469TRPBF-1"

Filters

INTERNATIONAL RECTIFIER IRF7469TRPBF N CHANNEL MOSFET, 40V, 9A

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 9A

Drain to Source Voltage (Vdss): 40V

Drain-source On Resistance-Max: 17MR

+11

Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

IRF7469

Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

IRF7463

Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SO-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

IRF7468

Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 1.9A

Drain to Source Voltage (Vdss): 150V

Input Capacitance: 330pF

IRF7464

Power Field-Effect Transistor, 1.2A I(D), 200V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 1.2A

Drain to Source Voltage (Vdss): 200V

Input Capacitance: 280pF

Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

IRF7464TR

Power Field-Effect Transistor, 1.2A I(D), 200V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 1.2A

Current Rating: 1.2A

Drain to Source Voltage (Vdss): 200V

IRF7468TR

Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 14A

Current Rating: 14A

Drain to Source Voltage (Vdss): 30V

IRF7465TR

Single N-Channel 150 V 2.5 W 10 nC Hexfet Power Mosfet Surface Mount - SOIC-8

Not Recommended for New Design

Package/Case: SOIC

Continuous Drain Current (ID): 1.9A

Current Rating: 1.9A

Drain to Source Voltage (Vdss): 150V

IRF7465HR

Trans MOSFET N-CH 150V 1.9A 8-Pin SOIC

Obsolete

Package/Case: SOIC

IRF7468PBF

Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

LEAD FREE, SO-8

Obsolete

JEDEC Package Code: MS-012AA

IRF7464PBF

200V 1.2A N-Channel MOSFET SOIC 730mR

SMALL OUTLINE, R-PDSO-G8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 1.2A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 730mR

IRF7463PBF

Trans MOSFET N-CH 30V 14A 8-Pin SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 14A

Current Rating: 14A

Drain to Source Breakdown Voltage: 30V

+27

IRF7465TRPBF

N-Ch MOSFET, 150V, 1.9A, 1-Elem, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 1

IRF7463TRPBF

Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SO-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

IRF7464TRPBF

N-Channel MOSFET, 200V, 1.2A, 730mR, SO-8

SO-8

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 1.2A

Current Rating: 1.2A

Drain to Source Breakdown Voltage: 200V