This device is a lead-free N-channel power MOSFET in an SO-8 surface-mount package. It is rated for 40 V drain-to-source voltage, 9.0 A continuous drain current at 25°C, and 17 mΩ maximum on-resistance at 10 V gate drive. The MOSFET is intended for high-frequency DC-DC conversion and synchronous rectification applications. It supports gate voltages up to ±20 V, dissipates up to 2.5 W at 25°C, and operates over a junction and storage temperature range of -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IRF7469TRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IRF7469TRPBF technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| JEDEC Package Code | MS-012AA |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IRF7469TRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
