Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg
