Search Results for &quot; IRF9321 &quot;

P-CHANNEL HEXFET MOSFET, -30V, -15A, SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): -15A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 11.2mR

N-Channel MOSFET, -15A, -30V, 7.2MR, SOIC Package, -55°C to 150°C

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): -15A

Drain to Source Voltage (Vdss): -30V

Drain-source On Resistance-Max: 7.2MR

Infineon

Power Field-Effect Transistor, 15A I(D), 30V, 0.0072ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Search Results for "IRF9321"

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IRF9321PBF

P-CHANNEL HEXFET MOSFET, -30V, -15A, SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): -15A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 11.2mR

N-Channel MOSFET, -15A, -30V, 7.2MR, SOIC Package, -55°C to 150°C

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): -15A

Drain to Source Voltage (Vdss): -30V

Drain-source On Resistance-Max: 7.2MR

Infineon

Power Field-Effect Transistor, 15A I(D), 30V, 0.0072ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8