Search Results for &quot; IRFH4210DTRPBF &quot;

25V 44A HEXFET MOSFET, 1.1mR Rds On, 3.5W PD, Surface Mount

Transferred

Continuous Drain Current (ID): 44A

Drain to Source Voltage (Vdss): 25V

Drain-source On Resistance-Max: 1.1MR

Input Capacitance: 4.812nF

Infineon

Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

Not Recommended

Max Operating Temperature: 150

Number of Elements: 1

IRFH4213DTRPBF

FETKEY, 25V, 100A, 1.35m, 26nC, PQFN5x6 single

Volume Production

Continuous Drain Current (ID): 40A

Drain to Source Voltage (Vdss): 25V

Drain-source On Resistance-Max: 1.35MR

Fall Time: 12ns

IRFH4210TRPBF

Power Field-Effect Transistor

Transferred

Continuous Drain Current (ID): 45A

Drain to Source Voltage (Vdss): 25V

Drain-source On Resistance-Max: 1.1MR

Fall Time: 15ns

Search Results for "IRFH4210DTRPBF"

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25V 44A HEXFET MOSFET, 1.1mR Rds On, 3.5W PD, Surface Mount

Transferred

Continuous Drain Current (ID): 44A

Drain to Source Voltage (Vdss): 25V

Drain-source On Resistance-Max: 1.1MR

Input Capacitance: 4.812nF

Infineon

Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

Not Recommended

Max Operating Temperature: 150

Number of Elements: 1

IRFH4213DTRPBF

FETKEY, 25V, 100A, 1.35m, 26nC, PQFN5x6 single

Volume Production

Continuous Drain Current (ID): 40A

Drain to Source Voltage (Vdss): 25V

Drain-source On Resistance-Max: 1.35MR

Fall Time: 12ns

IRFH4210TRPBF

Power Field-Effect Transistor