Search Results for &quot; IRFH4234TRPBF &quot;

Trans MOSFET N-CH 25V 22A 8-Pin PQFN T/R

Volume Production

Continuous Drain Current (ID): 22A

Drain to Source Voltage (Vdss): 25V

Drain-source On Resistance-Max: 4.6MR

Fall Time: 5.3ns

Trans MOSFET N-CH 25V 20A 8-Pin PQFN EP T/R

Volume Production

Continuous Drain Current (ID): 20A

Drain to Source Voltage (Vdss): 25V

Drain-source On Resistance-Max: 4.4MR

Fall Time: 5.3ns

Infineon

Power Field-Effect Transistor, 20A I(D), 25V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8

QFN-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 5

Terminal Position: DUAL

Number of Elements: 1

IRFH4231TRPBF

MOSFET 25V Single N-Ch HEXFET PWR 50A

Volume Production

Packaging: Tape and Reel

Search Results for "IRFH4234TRPBF"

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IRFH4234TRPBF

Trans MOSFET N-CH 25V 22A 8-Pin PQFN T/R

Volume Production

Continuous Drain Current (ID): 22A

Drain to Source Voltage (Vdss): 25V

Drain-source On Resistance-Max: 4.6MR

Fall Time: 5.3ns

Trans MOSFET N-CH 25V 20A 8-Pin PQFN EP T/R

Volume Production

Continuous Drain Current (ID): 20A

Drain to Source Voltage (Vdss): 25V

Drain-source On Resistance-Max: 4.4MR

Fall Time: 5.3ns

Infineon

Power Field-Effect Transistor, 20A I(D), 25V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8

QFN-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 5

Terminal Position: DUAL

Number of Elements: 1

IRFH4231TRPBF

MOSFET 25V Single N-Ch HEXFET PWR 50A