Search Results for &quot; IRFL014TRPBF &quot;

N-Channel JFET, 60V, 2.7A, 200mR, SOT-223

ROHS COMPLIANT PACKAGE-4

Active

Package/Case: SOT-223

Continuous Drain Current (ID): 2.7A

Drain to Source Resistance: 200mR

Drain to Source Voltage (Vdss): 60V

International Rectifier

Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4

SMALL OUTLINE, R-PDSO-G4

Transferred

Package/Case: SOT-223

Continuous Drain Current (ID): 2.7A

Current Rating: 2.7A

Drain to Source Breakdown Voltage: 60V

IRFL014TRPBF-BE3

Small Signal Field-Effect Transistor, 0.0027A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,

TO-261AA

Active

Max Operating Temperature: 150

Number of Terminals: 4

Min Operating Temperature: -55

Terminal Position: DUAL

Search Results for "IRFL014TRPBF"

Filters

N-Channel JFET, 60V, 2.7A, 200mR, SOT-223

ROHS COMPLIANT PACKAGE-4

Active

Package/Case: SOT-223

Continuous Drain Current (ID): 2.7A

Drain to Source Resistance: 200mR

Drain to Source Voltage (Vdss): 60V

International Rectifier

Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4

SMALL OUTLINE, R-PDSO-G4

Transferred

Package/Case: SOT-223

Continuous Drain Current (ID): 2.7A

Current Rating: 2.7A

Drain to Source Breakdown Voltage: 60V

IRFL014TRPBF-BE3

Small Signal Field-Effect Transistor, 0.0027A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,