N-Channel Silicon Metal-Oxide Semiconductor FET, 60V Drain-Source Voltage, 2.7A Continuous Drain Current. Features 200mΩ Max Drain-Source On Resistance, 4V Threshold Voltage, and 19ns Fall Time. Operates from -55°C to 150°C with 2W Max Power Dissipation. Surface mount TO-261AA (SOT-223) package, RoHS compliant.
Vishay IRFL014TRPBF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.8mm |
| Input Capacitance | 300pF |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.008826oz |
| Width | 3.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
