Search Results for &quot; IRFPS3815PBF &quot;

150V 105A N-CHANNEL HEXFET Through Hole Power MOSFET

Volume Production

Continuous Drain Current (ID): 105A

Current Rating: 105A

Drain to Source Breakdown Voltage: 150V

Drain to Source Voltage (Vdss): 150V

Power Field-Effect Transistor, 105A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, SUPER-247, 3 PIN

LEAD FREE, SUPER-247, 3 PIN

Obsolete

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

MOSFET, N, 100V, 141A, SUPER 247

Volume Production

Continuous Drain Current (ID): 170A

Current Rating: 170A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 9mR

Power Field-Effect Transistor, 105A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPER-247, 3 PIN

IN-LINE, R-PSIP-T3

Obsolete

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Search Results for "IRFPS3815PBF"

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150V 105A N-CHANNEL HEXFET Through Hole Power MOSFET

Volume Production

Continuous Drain Current (ID): 105A

Current Rating: 105A

Drain to Source Breakdown Voltage: 150V

Drain to Source Voltage (Vdss): 150V

Power Field-Effect Transistor, 105A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, SUPER-247, 3 PIN

LEAD FREE, SUPER-247, 3 PIN

Obsolete

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

MOSFET, N, 100V, 141A, SUPER 247

Volume Production

Continuous Drain Current (ID): 170A

Current Rating: 170A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 9mR

Power Field-Effect Transistor, 105A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPER-247, 3 PIN