Search Results for &quot; IRFS3107-7PPBF &quot;

Single N-Channel 75 V 2.6 mOhm 240 nC HEXFET® Power Mosfet - D2PAK-7

Volume Production

Package/Case: TO-263-7

Continuous Drain Current (ID): 260A

Drain to Source Voltage (Vdss): 75V

Drain-source On Resistance-Max: 2.6MR

MOSFET N-Channel 40V 400A 1.25MR 20V D2PAK

LEAD FREE, PLASTIC, D2PAK-7

Transferred

Package/Case: D2PAK

Continuous Drain Current (ID): 400A

Drain to Source Voltage (Vdss): 40V

Drain-source On Resistance-Max: 1.25MR

Infineon

Power Field-Effect Transistor, 400A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-7

SMALL OUTLINE, R-PSSO-G6

Obsolete

Max Operating Temperature: 175

Number of Terminals: 6

Min Operating Temperature: -55

Terminal Position: SINGLE

Search Results for "IRFS3107-7PPBF"

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IRFS3107-7PPBF

Single N-Channel 75 V 2.6 mOhm 240 nC HEXFET® Power Mosfet - D2PAK-7

Volume Production

Package/Case: TO-263-7

Continuous Drain Current (ID): 260A

Drain to Source Voltage (Vdss): 75V

Drain-source On Resistance-Max: 2.6MR

MOSFET N-Channel 40V 400A 1.25MR 20V D2PAK

LEAD FREE, PLASTIC, D2PAK-7

Transferred

Package/Case: D2PAK

Continuous Drain Current (ID): 400A

Drain to Source Voltage (Vdss): 40V

Drain-source On Resistance-Max: 1.25MR

Infineon

Power Field-Effect Transistor, 400A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-7