Search Results for &quot; IXFK26N120P &quot;

1200V 26A N-Channel MOSFET, 460mR Rds(on), TO-264

TO-264, 3 PIN

Transferred

Package/Case: TO-264

Continuous Drain Current (ID): 26A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 460mR

Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-264AA

Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN

PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 26A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 460mR

Power Field-Effect Transistor, 26A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

TO-264, 3 PIN

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 26A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 390mR

N-CHANNEL MOSFET 23A 1.2kV 460mR SOT-227-4

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 23A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 460mR

Power Field-Effect Transistor, 15A I(D), 1200V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 15A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 500mR

Drain to Source Voltage (Vdss): 1.2kV

Power Field-Effect Transistor, 26A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-264AA

Power Field-Effect Transistor, 15A I(D), 1200V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 23A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

FLANGE MOUNT, R-PUFM-X4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Search Results for "IXFK26N120P"

Filters

1200V 26A N-Channel MOSFET, 460mR Rds(on), TO-264

TO-264, 3 PIN

Transferred

Package/Case: TO-264

Continuous Drain Current (ID): 26A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 460mR

Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-264AA

Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN

PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 26A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 460mR

Power Field-Effect Transistor, 26A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

TO-264, 3 PIN

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 26A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 390mR

N-CHANNEL MOSFET 23A 1.2kV 460mR SOT-227-4

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 23A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 460mR

Power Field-Effect Transistor, 15A I(D), 1200V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 15A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 500mR

Drain to Source Voltage (Vdss): 1.2kV

Power Field-Effect Transistor, 26A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-264AA

Power Field-Effect Transistor, 15A I(D), 1200V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 23A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

FLANGE MOUNT, R-PUFM-X4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN