IXYS

IXFK26N120P

Datasheet

1200V 26A N-Channel MOSFET, 460mR Rds(on), TO-264

Ixys

IXFK26N120P

Name: IXFK26N120P Ixys
Brand: Ixys
SKU: IXFK26N120P

1200V 26A N-Channel MOSFET, 460mR Rds(on), TO-264

N-Channel Power MOSFET, 1200V Drain to Source Voltage (Vdss), 26A Continuous Drain Current (ID), and 0.46ohm Drain to Source Resistance (Rds On Max). Features a TO-264 package with through-hole mounting. Offers a maximum power dissipation of 960W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 56ns and fall time of 58ns.

PackageTO-264

MountingThrough Hole

PolarityN-CHANNEL

Power960W

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Technical Specifications

Ixys IXFK26N120P technical specifications.

General

Package/Case	TO-264
Continuous Drain Current (ID)	26A
Drain to Source Breakdown Voltage	1.2kV
Drain to Source Resistance	460mR
Drain to Source Voltage (Vdss)	1.2kV
Fall Time	58ns
Gate to Source Voltage (Vgs)	30V
Height	26.16mm
Input Capacitance	16nF
Length	19.96mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	960W
Mount	Through Hole
Number of Elements	1
Package Quantity	25
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	960W
Radiation Hardening	No
Rds On Max	460mR
RoHS Compliant	Yes
Series	Polar™ HiPerFET™
Turn-Off Delay Time	76ns
Turn-On Delay Time	56ns
Width	5.13mm