N-Channel Power MOSFET, 1200V Drain to Source Voltage (Vdss), 26A Continuous Drain Current (ID), and 0.46ohm Drain to Source Resistance (Rds On Max). Features a TO-264 package with through-hole mounting. Offers a maximum power dissipation of 960W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 56ns and fall time of 58ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys IXFK26N120P datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 460mR |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 58ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 16nF |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 960W |
| Radiation Hardening | No |
| Rds On Max | 460mR |
| RoHS Compliant | Yes |
| Series | Polar™ HiPerFET™ |
| Turn-Off Delay Time | 76ns |
| Turn-On Delay Time | 56ns |
| Width | 5.13mm |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFK26N120P to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
