Ixys
IXFK26N100P
Power Field-Effect Transistor, 26A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Power Field-Effect Transistor, 26A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power780W
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Technical Specifications
Ixys IXFK26N100P technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 390mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 11.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 780W |
| Rds On Max | 390mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 72ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFK26N100P Datasheet
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