Search Results for &quot; IXFR44N50P &quot;

N-Channel MOSFET 500V 24A 150mR Through Hole

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 24A

Current Rating: 44A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 150mR

Power Field-Effect Transistor, 24A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

800V N-Channel MOSFET, 25A ID, 200mR Rds(on)

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 25A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 200mR

Drain to Source Voltage (Vdss): 800V

N-Channel MOSFET, 500V, 44A, 140mR, TO-268

TO-268, 3 PIN

Transferred

Package/Case: TO-268-3

Continuous Drain Current (ID): 44A

Current: 44A

Current Rating: 44A

Power Field-Effect Transistor, 25A I(D), 500V, 0.154ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN

PLASTIC, ISOPLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 25A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 154mR

Power Field-Effect Transistor, 34A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 34A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 154mR

Drain to Source Voltage (Vdss): 500V

Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-268AA

Power Field-Effect Transistor, 25A I(D), 800V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor,

Active

Power Field-Effect Transistor, 34A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Search Results for "IXFR44N50P"

Filters

N-Channel MOSFET 500V 24A 150mR Through Hole

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 24A

Current Rating: 44A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 150mR

Power Field-Effect Transistor, 24A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

800V N-Channel MOSFET, 25A ID, 200mR Rds(on)

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 25A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 200mR

Drain to Source Voltage (Vdss): 800V

N-Channel MOSFET, 500V, 44A, 140mR, TO-268

TO-268, 3 PIN

Transferred

Package/Case: TO-268-3

Continuous Drain Current (ID): 44A

Current: 44A

Current Rating: 44A

Power Field-Effect Transistor, 25A I(D), 500V, 0.154ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN

PLASTIC, ISOPLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 25A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 154mR

Power Field-Effect Transistor, 34A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 34A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 154mR

Drain to Source Voltage (Vdss): 500V

Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-268AA

Power Field-Effect Transistor, 25A I(D), 800V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor,

Active

Power Field-Effect Transistor, 34A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN