Search Results for &quot; IXFX20N120 &quot;

1200V 20A N-Channel MOSFET, 750mR Rds On, TO-247

IN-LINE, R-PSIP-T3

End Of Life

Package/Case: TO-247-3

Continuous Drain Current (ID): 20A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 750mR

Power Field-Effect Transistor, 20A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3

PLUS247-3

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 20A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 570mR

Littelfuse

Power Field-Effect Transistor, 20A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Search Results for "IXFX20N120"

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IXFX20N120

1200V 20A N-Channel MOSFET, 750mR Rds On, TO-247

IN-LINE, R-PSIP-T3

End Of Life

Package/Case: TO-247-3

Continuous Drain Current (ID): 20A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 750mR

Power Field-Effect Transistor, 20A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3

PLUS247-3

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 20A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 570mR

Littelfuse

Power Field-Effect Transistor, 20A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3