Search Results for &quot; IXYX140N90C3 &quot;

Insulated Gate Bipolar Transistor, 310A I(C), 900V V(BR)CES, N-Channel,

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 900V

Collector-emitter Voltage-Max: 2.7V

Input Type: STANDARD

Insulated Gate Bipolar Transistor,

Active

900V N-Ch IGBT 310A TO-264

TO-264, 3 PIN

Transferred

Package/Case: TO-264-3

Collector Emitter Breakdown Voltage: 900V

Collector-emitter Voltage-Max: 2.7V

Input Type: STANDARD

900V IGBT, 140A, N-Channel

Active

Search Results for "IXYX140N90C3"

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Insulated Gate Bipolar Transistor, 310A I(C), 900V V(BR)CES, N-Channel,

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 900V

Collector-emitter Voltage-Max: 2.7V

Input Type: STANDARD

Insulated Gate Bipolar Transistor,

Active

900V N-Ch IGBT 310A TO-264

TO-264, 3 PIN

Transferred

Package/Case: TO-264-3

Collector Emitter Breakdown Voltage: 900V

Collector-emitter Voltage-Max: 2.7V

Input Type: STANDARD

900V IGBT, 140A, N-Channel