Search Results for &quot; JAN2N3802 &quot;

NPN Transistor TO-3 400V 3.5A 5W Through Hole

Volume Production

Package/Case: TO-3

Collector Base Voltage (VCBO): 700V

Collector Emitter Breakdown Voltage: 400V

Collector Emitter Voltage (VCEO): 400V

JAN2N6802U

Junction Field-Effect Transistor 500V 2.5A CLCC Surface Mount

Obsolete

Package/Case: CLCC

Continuous Drain Current (ID): 2.5A

Drain to Source Voltage (Vdss): 500V

Fall Time: 30ns

Junction Field-Effect Transistor 500V 2.5A 20V 25W TO-39

HERMETIC SEALED, TO-39, 3 PIN

Obsolete

Package/Case: TO-39

Continuous Drain Current (ID): 2.5A

Drain to Source Voltage (Vdss): 500V

Gate to Source Voltage (Vgs): 20V

JAN2N3822

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-72, TO-72, 4 PIN

TO-72, 4 PIN

Active

Max Operating Temperature: 200

Number of Terminals: 4

Terminal Position: BOTTOM

JEDEC Package Code: TO-72

Power Bipolar Transistor, 3.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

TO-3

Active

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: BOTTOM

JEDEC Package Code: TO-3

VPT

Power Bipolar Transistor,

Active

Vishay(Siliconix)

Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

CYLINDRICAL, O-MBCY-W3

Obsolete

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205

Number of Elements: 1

Search Results for "JAN2N3802"

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NPN Transistor TO-3 400V 3.5A 5W Through Hole

Volume Production

Package/Case: TO-3

Collector Base Voltage (VCBO): 700V

Collector Emitter Breakdown Voltage: 400V

Collector Emitter Voltage (VCEO): 400V

JAN2N6802U

Junction Field-Effect Transistor 500V 2.5A CLCC Surface Mount

Obsolete

Package/Case: CLCC

Continuous Drain Current (ID): 2.5A

Drain to Source Voltage (Vdss): 500V

Fall Time: 30ns

Junction Field-Effect Transistor 500V 2.5A 20V 25W TO-39

HERMETIC SEALED, TO-39, 3 PIN

Obsolete

Package/Case: TO-39

Continuous Drain Current (ID): 2.5A

Drain to Source Voltage (Vdss): 500V

Gate to Source Voltage (Vgs): 20V

JAN2N3822

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-72, TO-72, 4 PIN

TO-72, 4 PIN

Active

Max Operating Temperature: 200

Number of Terminals: 4

Terminal Position: BOTTOM

JEDEC Package Code: TO-72

Power Bipolar Transistor, 3.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

TO-3

Active

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: BOTTOM

JEDEC Package Code: TO-3

VPT

Power Bipolar Transistor,

Active

Vishay(Siliconix)

Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205