Power Field-Effect Transistor, 2.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,