Search Results for &quot; JANTX2N6895 &quot;

Contact for details

Volume Production

Package/Case: TO-39

Mount: Through Hole

RoHS Compliant: No

Contact for details

Obsolete

Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Transferred

Package/Case: TO-39

Continuous Drain Current (ID): 4A

Gate to Source Voltage (Vgs): 20V

Lead Free: Contains Lead

Trans MOSFET P-CH 100V 3.5A 18-Pin LLCC

Volume Production

Continuous Drain Current (ID): 3.5A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 125°C

Min Operating Temperature: -55°C

Silicon Controlled Rectifier, 200V V(DRM), 200V V(RRM), 1 Element, TO-208AA, TO-48, TO-208, 2 PIN

POST/STUD MOUNT, O-MUPM-D2

Obsolete

Package/Case: TO-48-3

Hold Current: 50mA

Max Operating Temperature: 125°C

Min Operating Temperature: -65°C

Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-48, HERMETIC SEALED PACKAGE-2

POST/STUD MOUNT, O-MUPM-D2

Active

Max Operating Temperature: 125

Number of Terminals: 2

Min Operating Temperature: -60

Terminal Position: UPPER

JANTX2N689

Silicon Controlled Rectifier, 25A I(T)RMS, 16000mA I(T), 500V V(DRM), 500V V(RRM), 1 Element, TO-48, HERMETIC SEALED PACKAGE-2

POST/STUD MOUNT, O-MUPM-D2

Active

Max Operating Temperature: 125

Number of Terminals: 2

Min Operating Temperature: -60

Terminal Position: UPPER

Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: BOTTOM

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18

CHIP CARRIER, R-CQCC-N15

Active

Max Operating Temperature: 150

Number of Terminals: 15

Terminal Position: QUAD

Number of Elements: 1

JANTX2N689

Thyristor SCR 500V 150A 3-Pin TO-208AA

Volume Production

Contact Plating: Tin, Lead

Max Operating Temperature: 125°C

Min Operating Temperature: -65°C

Mount: Stud

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Volume Production

RoHS Compliant: No

Search Results for "JANTX2N6895"

Filters

Contact for details

Volume Production

Package/Case: TO-39

Mount: Through Hole

RoHS Compliant: No

Contact for details

Obsolete

Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Transferred

Package/Case: TO-39

Continuous Drain Current (ID): 4A

Gate to Source Voltage (Vgs): 20V

Lead Free: Contains Lead

Trans MOSFET P-CH 100V 3.5A 18-Pin LLCC

Volume Production

Continuous Drain Current (ID): 3.5A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 125°C

Min Operating Temperature: -55°C

Silicon Controlled Rectifier, 200V V(DRM), 200V V(RRM), 1 Element, TO-208AA, TO-48, TO-208, 2 PIN

POST/STUD MOUNT, O-MUPM-D2

Obsolete

Package/Case: TO-48-3

Hold Current: 50mA

Max Operating Temperature: 125°C

Min Operating Temperature: -65°C

Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-48, HERMETIC SEALED PACKAGE-2

POST/STUD MOUNT, O-MUPM-D2

Active

Max Operating Temperature: 125

Number of Terminals: 2

Min Operating Temperature: -60

Terminal Position: UPPER

JANTX2N689

Silicon Controlled Rectifier, 25A I(T)RMS, 16000mA I(T), 500V V(DRM), 500V V(RRM), 1 Element, TO-48, HERMETIC SEALED PACKAGE-2

POST/STUD MOUNT, O-MUPM-D2

Active

Max Operating Temperature: 125

Number of Terminals: 2

Min Operating Temperature: -60

Terminal Position: UPPER

Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: BOTTOM

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18