RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 412-01, 4 PIN
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 319-07, 6 PIN
Trans RF MOSFET N-CH 65V 4A 6-Pin Case 319-07
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
TRANSISTOR,MOSFET,N-CHANNEL,28V V(BR)DSS,SOT-171VAR
