RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 319-07, 6 PIN
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| Max Operating Temperature | 200 |
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| REACH | unknown |
| Military Spec | False |
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