RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN
L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
Very Fast-Acting Chip Fuses
Trans RF MOSFET N-CH 120V 6A 4-Pin Case 211-07
RF Power Field-Effect Transistor
