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RF Power Field-Effect Transistor

Obsolete

Continuous Drain Current (ID): 2.1A

Current Rating: 3A

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Transistors RF MOSFET Power HV5 LDMOS WCDMA NI880

Obsolete

Continuous Drain Current (ID): 2.1A

Current Rating: 3A

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

RF Power Field-Effect Transistor

Obsolete

Continuous Drain Current (ID): 2.1A

Current Rating: 3A

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

RF Power Field-Effect Transistor

,

Obsolete

Current Rating: 2.5A

Frequency: 2.17GHz

Gain: 13.5dB

Lead Free: Lead Free

RF Power Field-Effect Transistor

Obsolete

Current Rating: 3.6A

Drain to Source Voltage (Vdss): 28V

Frequency: 2.17GHz

Gain: 12.5dB

Freescale Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR

FLATPACK, R-CDFP-F2

Transferred

Max Operating Temperature: 200

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2