Search Results for &quot; MRF6P3300HR5 &quot;

RF Power Field-Effect Transistor

Obsolete

Current Rating: 2.4A

Drain to Source Voltage (Vdss): 32V

Frequency: 863MHz

Gain: 20.2dB

Freescale Semiconductor

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN

FLANGE MOUNT, R-CDFM-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: DUAL

Pin Count: 4

MRF6P3300HR3

RF Power Field-Effect Transistor

Obsolete

Current Rating: 2.4A

Drain to Source Voltage (Vdss): 32V

Frequency: 863MHz

Gain: 20.2dB

MRFE6P3300HR5

FET RF 66V 863MHZ NI-860C3

Obsolete

Drain to Source Breakdown Voltage: 66V

Drain to Source Voltage (Vdss): 66V

Frequency: 863MHz

Gain: 20.4dB

Search Results for "MRF6P3300HR5"

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RF Power Field-Effect Transistor

Obsolete

Current Rating: 2.4A

Drain to Source Voltage (Vdss): 32V

Frequency: 863MHz

Gain: 20.2dB

Freescale Semiconductor

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN

FLANGE MOUNT, R-CDFM-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: DUAL

Pin Count: 4

MRF6P3300HR3

RF Power Field-Effect Transistor

Obsolete

Current Rating: 2.4A

Drain to Source Voltage (Vdss): 32V

Frequency: 863MHz

Gain: 20.2dB

MRFE6P3300HR5

FET RF 66V 863MHZ NI-860C3