Search Results for &quot; PSMN010-55D &quot;

Philips

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Transferred

Package/Case: DPAK

Continuous Drain Current (ID): 75A

Drain to Source Voltage (Vdss): 55V

Nexperia

Power Field-Effect Transistor

DPAK-3

Active

Number of Terminals: 2

Terminal Position: SINGLE

Number of Elements: 1

TRANSISTOR 75 A, 55 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power

DPAK-3

Transferred

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

Pin Count: 3

PSMN010-55D,118

N-CHANNEL TrenchMOS MOSFET 55V 75A 125W TO-252-3

Obsolete

Package/Case: TO-252-3

Continuous Drain Current (ID): 75A

Drain to Source Breakdown Voltage: 55V

Drain to Source Resistance: 10.5mR

PSMN010-55D/T3

N-Channel Power MOSFET 55V 75A 125W SOT-428

Obsolete

Package/Case: SOT-428

Continuous Drain Current (ID): 75A

Drain to Source Breakdown Voltage: 55V

Drain to Source Resistance: 10.5mR

Search Results for "PSMN010-55D"

Filters

Philips

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Transferred

Package/Case: DPAK

Continuous Drain Current (ID): 75A

Drain to Source Voltage (Vdss): 55V

Nexperia

Power Field-Effect Transistor

DPAK-3

Active

Number of Terminals: 2

Terminal Position: SINGLE

Number of Elements: 1

TRANSISTOR 75 A, 55 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power

DPAK-3

Transferred

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

Pin Count: 3

PSMN010-55D,118

N-CHANNEL TrenchMOS MOSFET 55V 75A 125W TO-252-3

Obsolete

Package/Case: TO-252-3

Continuous Drain Current (ID): 75A

Drain to Source Breakdown Voltage: 55V

Drain to Source Resistance: 10.5mR

PSMN010-55D/T3

N-Channel Power MOSFET 55V 75A 125W SOT-428