Insulated Gate Bipolar Transistor, 60A I(C), 4500V V(BR)CES, N-Channel,
Insulated Gate Bipolar Transistor, 60A I(C), 4500V V(BR)CES, N-Channel, SURFACE MOUNT PACKAGE-3
Rectifier Diode, 1 Phase, 1 Element, 60A, 4500V V(RRM), Silicon,
