RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
D Subminiature Connector, 15 Contact(s), Male, Crimp Terminal, Hole .112-.124, Receptacle,
D Subminiature Connector, 15 Contact(s), Male, Crimp Terminal, Hole .112-.124, Receptacle,