Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package