Power Field-Effect Transistor, 55A I(D), 1200V, 0.052ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
SiC MOSFET, 1200V, 72A, 0.039Ω, N-Ch, TO-247
SiC MOSFET, 1200V, 31A, N-Ch, 0.104Ω, TO-247
