SiC MOSFET, 650V, 39A, 0.078Ω, N-Ch, TO-247
Power Field-Effect Transistor, 39A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
Splice Terminal Seamless Copper 138.2mm Tin
SiC Power MOSFET 1.2kV 40A 80mR N-CH TO-247
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package
SiC MOSFET, N-Ch, 650V, 70A, 0.039Ω, TO-247
Power Field-Effect Transistor, 30A I(D), 650V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
Power Field-Effect Transistor,
Power Field-Effect Transistor, 30A I(D), 650V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
1200V 55A N-Ch SiC MOSFET TO-247
Power Field-Effect Transistor, 55A I(D), 1200V, 0.052ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
SiC MOSFET, 1200V, 72A, 0.039Ω, N-Ch, TO-247
Power Field-Effect Transistor, 93A I(D), 650V, 0.0286ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
SiC MOSFET, 1200V, 31A, N-Ch, 0.104Ω, TO-247
3-Terminal MOSFET, TO-247, 175°C
Power Field-Effect Transistor, 17A I(D), 1200V, 0.208ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
650V 21A N-Ch SiC MOSFET TO-247 3-Pin
