Search Results for "SDEM25201B-100MS"

Sealed Choke Coil SDER041B Type

10uH 1.1A Ferrite SMD Power Inductor, 20% Tol

Inductor Power Shielded Wirewound 10uH 20% 1KHz Ferrite 2.5A 0.05Ohm DCR T/R

Inductor RF Chip Unshielded Wirewound 0.01uH 20% 50MHz 60Q-Factor Phenolic 1.27A 0.06Ohm DCR T/R

Inductor RF Chip Unshielded Wirewound 0.01uH 20% 150MHz 48Q-Factor Phenolic 1.59A 0.05Ohm DCR Bulk

Inductor Power Unshielded Wirewound 10uH 20% 1MHz Ferrite 1.05A 0.172Ohm DCR Automotive T/R

SMD Power Inductor 10uH 3.8A Ferrite Unshielded 1MHz AEC-Q200

Inductor Power Unshielded Wirewound 10uH 20% 1MHz Ferrite 2.6A 0.1Ohm DCR Automotive T/R

Inductor Power Unshielded Wirewound 10uH 20% 1MHz Ferrite 3.2A 0.07Ohm DCR Automotive T/R

Inductor RF Chip Unshielded Wirewound 0.01uH 20% 50MHz 60Q-Factor Phenolic 1.27A 0.06Ohm DCR T/R

Inductor RF Chip Unshielded Wirewound 0.01uH 20% 150MHz 48Q-Factor Phenolic 1.59A 0.05Ohm DCR Bulk

CBL RIBN 10COND 0.039 GRAY 100M

TIME DELAY RELAY, SPST-NO, 100MIN, 12VDC

CBL RIBN 20COND 0.039 GRAY 50M

TIME DELAY RELAY SPST-NO, 100MIN, 120VAC - More Details

General Purpose Inductor, 10uH, 20%, 1 Element, SMD, 3943, CHIP, 3943, HALOGEN FREE AND ROHS COMPLIANT

AMPERITE 120A1-100MST1A TIME DELAY RELAY SPST-NO, 100MIN, 120VAC

PSMN040-100MSE - N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications

PSMN075-100MSE - N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications

Inductor RF Chip Wirewound 0.1uH 20% 50MHz 32Q-Factor Phenolic 0.65A 0.23Ohm DCR T/R