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PHOTOTRANSISTOR NPN

End of Life

Package/Case: Radial

Collector Emitter Breakdown Voltage: 35V

Lens Style: Domed

Max Breakdown Voltage: 35V

NPN Phototransistor 860nm 35V 15mA Through Hole

Volume Production

Package/Case: T

Collector Emitter Breakdown Voltage: 35V

Collector Emitter Saturation Voltage: 200mV

Collector Emitter Voltage (VCEO): 35V

Phototransistor IR Chip Silicon 900nm 2-Pin T-1

T-1

Active

Phototransistor Type: Phototransistor

Type: IR Chip

Polarity: NPN

Half Intensity Angle Degrees: 24°