NPN phototransistor with a 35V collector-emitter breakdown voltage, designed for through-hole mounting. Features a 15mA maximum collector current and a 200mV collector-emitter saturation voltage. Operates within a temperature range of -40°C to 100°C, with a maximum power dissipation of 165mW. This component utilizes a domed lens style, offers a 24° viewing angle, and has a wavelength sensitivity of 860nm. Packaged in bulk for convenience.
PackageT
MountingThrough Hole
PolarityNPN
Power165mW
Quick Jump:
Technical Specifications
Osram SFH309-5 technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
35V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
35V
Collector-emitter Voltage-Max
35V
Fall Time
8000ns
Height
5.2mm
Length
4mm
Lens Style
Domed
Max Breakdown Voltage
35V
Max Collector Current
15mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
165mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Power Dissipation
165mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
24°
Wavelength
860nm
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Osram SFH309-5 Datasheet
Download the complete datasheet for Osram SFH309-5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
